Plenary Session Overviews

Silicon Carbide for Power Devices: History, Evolution, Applications, and Prospects

Dr. Ahmed Elasser

Principal Systems Engineer

GE Global Research Center

Niskayuna, NY, USA

Dr. Ahmed Elasser received his Engineering Degree (Ingenieur D'Etat) from L'Ecole Mohammadia D'Ingenieurs, Rabat, Morocco in 1985 in Electric Power and Power Electronics. He spent seven years in Morocco working for industry and academia as a maintenance and laboratory engineer. He joined Rensselaer Polytechnic Institute in Troy, NY on a Fulbright Scholarship in 1992 and completed his MS and PhD degrees in Electric Power and Power Electronics in 1993 and 1996 respectively. He joined GE Global Research Center in 1995 as a summer intern and is currently a Principal Systems Engineer in the areas of Electric Power, Power

Electronics, and Power Semiconductor Devices. He worked on Silicon Power Devices such as IGBTs and IGCTs, Solar Energy, Silicon Carbide, Gallium Nitride, Power Conversion Systems Modeling and Simulation, and Innovation. He is currently leading the GE Renewable Reservoir Power Conversion components testing and qualification. He published over 40 papers and has 27 patents issued. Dr. Elasser is a Senior Member of IEEE and a regular reviewer for many IEEE journals and conferences in his area of expertise. Dr. Ahmed Elasser is the recipient of numerous GE Awards for his contributions and innovations over his 23 years GE career.

This plenary talk provides a historical overview of Silicon Carbide (SiC) power devices from the presenter's perspective. Having been involved with SiC since the mid 90s, the author shows how SiC has evolved from its early days when wafer diameters were small and defects were many to 6" wafers and many commercial offerings. An overview of GE's SiC work from Schottky diodes, PiN diodes, GTOs, to Thyristors is presented. GE Global Research Center (GE-GRC) SiC MOSFET work and progress to date is shown with emphasis on the 1.2kV and 1.7kV devices. 2.5kV and 3.3kV SiC MOSFETs are also discussed. The use of SiC power devices in various GE applications is also shown. Finally, a peek into the charge balance or super-junction SiC power devices, that GE-GRC is currently working on, is provided.


Electrification Challenges in Aeronautics

Pascal ASFAUX

CTO Technology Roadmap Owner “Power Electronics”

AIRBUS Toulouse, France

Pascal ASFAUX currently serves as Power Electronics Roadmap Owner for Airbus Company, leader in civil and military aerospace products. He steers R&T projects on Power Electronics in all Divisions to develop Group-Wide synergies and to align with top-level CTO objectives. He develops, manages, coordinates and matures the technology roadmap, creating a vision. He manages various technical projects and works closely with design office teams to assess and integrate new power electronics technologies into next generation aircraft systems. Share his experience by providing technical training to Airbus colleagues, ensure an expertise role to support legacy and future programs are two others missions he has. He has been working in the field of power electronics for over 12 years in the frame of R&T projects.

 

Christophe LOCHOT

Electrical System R&T Group Leader

AIRBUS Toulouse, France

Christophe LOCHOT is currently leading the Electrical System R&T Group in the Design Office of Airbus civil Aviation since the beginning of 2018. The activity of his group is focused on the electrification of the aircraft. His teams is involved in several projects dealing with the More Electrical Aircraft, concept on which Electricity is the only onboard energy for non-propulsive system, and other projects focused on the electrical propulsion. Previously, he was part of the A350XWB Team, developing the electrical system, from the first stage of design in 2006 up to the Entry into service in 2015. Then he has taking the lead of an operational team managing conversion, distribution and Electrical System certification of the whole Airbus Fleet. Before joining Airbus, he has done several years of research in the Smart Power Component flied at Motorola/Freescale for automotive and industrial market.

The aim of the presentation is explain the challenges that aeronautics industry is currently facing to do its electrical revolution and what are the repercussion on the Power Electronics field.

Aeronautics constraints are therefore bringing to the Power Electronics Industry new technical challenges in term of environmental conditions, in term of reliability, in term of integration. That is why, Aircraft Electrification is strongly linked to the capability of the power electronics technology. If we want to electrically fly in the next decade, a lot of progress have still to be done to generalize the use of power electronics into an Aircraft.


Charles Bailey

Senior Director, WW Business Development

GaN Systems

Santa Clara, CA

The convergence of WBG Device production and increasing Industry-wide requirement for power-dense, high-Efficiency Power Electronics systems mandates technology advancement in Power Packaging. The increased dV/dt of WBG Devices requires Package-level integration of Gate Drive to minimize Loop inductances. Lower RSP’s of WBG Devices coupled with increased system power density requires lower Thermal Resistances. Specification targets for WBG Power Packaging across a wide power range, and Methodologies to achieve electrical and thermal performance will be explored. Demonstration of application-level performance of GaN E-HEMTs in micro-Modules, Discretes, and Power Modules, ranging from 150W ~ 150kW will be demonstrated. Summary includes an Industry-wide Call-to-Action for technology advancement in Embedded design and Materials, and proliferation of Manufacturing Base for advanced Power Packaging


Novel Thermal & Packaging Paradigms for Next-Generation Power Electronics

Dr. Ercan Dede

Research Scientist

Toyota Research Institute of North America

Ann Arbor, MI

Ercan M. Dede received his B.S. degree and Ph.D. in mechanical engineering from the University of Michigan and an M.S. degree in mechanical engineering from Stanford University. Currently, he is a Senior Research Manager in the Electronics Research Department at the Toyota Research Institute of North America. His research focuses on vehicle systems involving sensors, power semiconductors, advanced circuits, packaging, and thermal management technology. He has over 65 issued patents and has published more than 70 articles in archival journals and conference proceedings on topics related to design and structural optimization of thermal, mechanical, and electromagnetic systems. He is an author of a book entitled, ``Multiphysics Simulation: Electromechanical System Applications and Optimization.'' He has received two R&D 100 Awards for participating in teams that developed technologies related to next-generation power electronics for electrified vehicles.

The transition to wide band-gap semiconductor devices for power electronics has initiated a rethinking of traditional thermal management and packaging strategies. Specifically, wide band-gap devices permit higher package power densities through higher device switching frequencies and concomitant reductions in module and passive size. Thus, new packaging configurations are being investigated, and as part of this field standard thermal management techniques, such as standalone cold plates, are being reexamined. In this talk, the concept of near-junction cooling for next-generation wide band-gap power electronics is presented. Several technical approaches to chip-scale cooling are reviewed. Recent progress toward a selected unique approach is then presented including the design, microfabrication, and thermal-fluid testing of two distinct chip-scale cooler prototypes. Such novel thermal management and packaging paradigms are anticipated to enable an eventual order-of-magnitude size reduction in power package size.

Reliability in power electronics modules: A challenge to define tools and methodologies in phase with the performances of power chips and the constraints of use

Dr. Laurent Dupont

Chargé de recherche 

IFSTTAR - SATIE

Versailles, France

Dr Laurent Dupont received the Electrical Engineer in 2002, and the Ph.D. degree in electrical engineering from the Ecole Normale Supérieure de Cachan (ENS-Cachan), France, in 2006. After ten years of experiences in industry, he works as researcher scientist in the SATIE Laboratory, French Institute of Science and Technology for Transport, Development and Networks, Versailles, France since 2007. His research interests are geared towards the robustness evaluation of power semiconductor modules. His research activities are mainly focused on parameters allowing estimations of the temperatures and of the ageing indicators of power components during their operation.

Power electronics modules are one of the main keys to ensuring the availability and the performances of an electrical conversion chain. However, cost-based design goals and new applications are leading to increased constraints on power modules that are suitable for the next generation of power chips. This environment is the backbone of extensive research in the field of reliability using improved methods and tools.

This plenary talk is intended to act as an introduction to the Reliability and Testing session of this New International Workshop on Integrated Power Packaging proposes to introduce and develop expertise to facilitate the emergence of robust and reliable technical breakthroughs.