Tutorial Session Overviews

Current status of optimized SiC power device, package and power electronic system solutions

Dr. Ty McNutt

Director of Business Development


Fayetteville, AR

Dr. Ty McNutt currently serves as Director of Business Development for the Fayetteville, Arkansas location of Wolfspeed, a Cree Company. He manages various technical projects, and works closely with customers and their applications teams to integrate advanced silicon carbide device and packaging technologies into next generation systems. He is an inventor on seven issued patents on silicon carbide materials, devices, packaging, and applications, as well as authored or co-authored over 70 publications on wide bandgap devices. Dr. McNutt has been working in the field of silicon carbide for over 18 years and received his Ph.D. in Electrical Engineering from the University of Arkansas in the field of silicon carbide semiconductor device physics.

The tutorial will cover SiC devices, packaging, and optimization of power electronic systems through design. For each topic, the current status of the technology will be covered, as well as touch on future technologies currently being developed. In addition, the tutorial will cover qualification and reliability aspects of the device and packaging technologies, from industrial to automotive requirements.

Modeling Conducted EMI and the Common-Mode Effects of Unbalanced Parasitics in Multi-Chip Power Modules

Dr. Aaron D. Brovont

Assistant Professor, Electrical and Computer Engineering

The University of Alabama

Tuscaloosa, Alabama

Aaron D. Brovont received the B.S. in electrical engineering, the M.S. in electrical and computer engineering, and the Ph.D. degrees from Purdue University in West Lafayette, IN, in 2011, 2013, and 2016, respectively. He is currently an Assistant Professor of Electrical and Computer Engineering at the University of Alabama, Tuscaloosa. His research interests include modeling and design of power electronic systems for optimal EMI mitigation, utilization of common-mode behavior for power system monitoring and control, and numerical methods for use with population-based design of power system components.

This tutorial provides an introductory to intermediate-level treatment of techniques for modeling and analysis of conducted EMI in power electronic systems. Emphasis is placed on understanding common-mode behavior and mode conversion directly resulting from power module parasitics. Specifically, a systematic approach to modeling conducted emissions in power electronic systems is derived, and the approach is demonstrated on an example EMI qualification testbed. Predicted and experimental results are compared. The demonstration includes the identification of critical parasitic elements, decomposition of common-mode (CM) and differential-mode (DM) operation, and analytical estimation of induced CM voltages. Finally, the decomposed DM/CM model is employed to quantitatively analyze and mitigate the impact of power module parasitics on EMI compliance.